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Silicon carbide (SiC) power electronics development problems

I. Introduction

The past two decades the semiconductor material silicon carbide is valued people in the beginning , because it has many advantages. Early

In Shangshi remember the 1950s, Huang Kun , Xie Xide coauthored "Semiconductor Physics " book has been described semiconductor silicon carbide. The first to enter fabricating a semiconductor device material is germanium, then silicon and III and V semiconductor materials boarded the stage of history. Until now the field of power electronics , such as thyristors and IGBT high voltage, high current devices are still using silicon single crystal materials. Since SiC devices breakthrough design theory , expectations for higher performance power semiconductor devices are increasingly urgent.

In 2002, there was a prophecy researcher with the text :

Currently , the company has to sell in Germany Infineon SiC Schottky barrier diode in the market. The world have developed many large semiconductor companies to reduce channel resistance of SiC devices and reduce the overall device power consumption technology. 2006 is expected to be sold after these advanced devices on the market .

Currently , low-power silicon carbide devices have from the laboratory into practical production stage devices. Currently the price is also high silicon carbide wafer , its flaws are many. Through continuous research and development, projected to the year 2010 , the SiC device will dominate the power device market .

Is not the case . The following table is the world leader in silicon carbide device level parameters:




It seems to let people disappointed !

Second, how people evaluate silicon carbide ?

Almost all who can read this article describes the silicon carbide :

The energy band gap of silicon carbide is 2.8 times the silicon ( wide band gap ) , to 3.09 eV. Its insulation breakdown field strength of 5.3 times the silicon up 3.2MV/cm. Whose thermal conductivity is 3.3 times the silicon is 49w/cm.k. Made of silicon carbide Schottky diodes and MOS field-effect transistors, the same voltage as compared with a silicon device, the drift region of the thin thickness of the resistance an order of magnitude . The impurity concentration of the order of two silicon . Thus, the impedance per unit area of silicon carbide devices are only one of 100 silicon devices . It 's almost equal to the whole drift of resistance resistance of the device . SiC devices thus very low heat . This helps to reduce conduction and switching losses , higher operating frequency than silicon devices generally more than 10 times . In addition, there are inherent silicon carbide semiconductor strong resistance to radiation .

In recent years, the production of silicon carbide using IGBT ( insulated gate bipolar transistors ) and other power devices, such processes have minority carrier injection may be used to reduce the on-state resistance is generally one tenth of the silicon devices . SiC device itself plus a small amount of heat , and thus the thermal conductivity of SiC devices Excellent. Also, SiC power devices can work at a high temperature of 400 ℃ . Its small size of the device can be used to control large currents. Voltage is much higher .

Third, the current development situation of how SiC devices ?

1 , the technical parameters : for example, a Schottky diode voltage increased from 250 volts to 1000 volts , the chip area is small , but the current of only a few dozen security . Operating temperature up to 180 ℃, 600 ℃ from the presentation can be reached very far . Drop even more unsatisfactory, there is no difference with the silicon material , to achieve high forward voltage drop of 2V.

2 , the market price : about 5-6 times the silicon material.

Fourth, where silicon carbide (SiC) power electronics development problems in ?

Comprehensive various reports , the problem is not the principle of chip design, especially the chip design is not difficult to solve . Difficulty in achieving chip structure production process.

For example:

A silicon carbide wafer defect density of microtubules . Microtubules are visible to the naked eye is a macroscopic defects in SiC crystal growth technology before to be able to completely eliminate micro- tube defects , high- power electronic devices with silicon carbide would be difficult to manufacture . Despite the high density of microtubules wafer has reached the level of no more than 15cm-2 's . But the device manufacturing requirements than 100mm diameter silicon carbide crystals, microtubule density is less than 0.5cm-2.

2, low epitaxial process efficiency. Gas SiC homoepitaxial generally carried out at temperatures above 1500 ℃ . Because of the problem of sublimation , the temperature is not too high , generally can not exceed 1800 ℃, and thus a lower growth rate . Low temperature liquid phase epitaxy , the higher rate , but low yield.

3, the doping process have special requirements . Diffusion method as miserable heteroaryl , much higher than the diffusion temperature of silicon carbide , then the SiO2 layer has been masked with a masking effect lost , and silicon carbide itself is not stable at such high temperatures , it is not appropriate dopant diffusion method using , but rather use the ion implantation doping . If the p -type impurity ion implantation using aluminum . Due to aluminum atomic ratio greater carbon atoms , into lattice damage and without impurities in the active state are more serious , often at a relatively high substrate temperature , and annealing at higher temperatures. This brought the decomposition of the silicon carbide wafer , a silicon atom sublimation problems. At present , p -type ion implantation problems still more, the annealing temperature selected from the range of impurities to the process parameters to be optimized further .

4 , making ohmic contact . The ohmic contact electrode lead is a very important process of the device . Manufacture of metal electrodes on silicon carbide wafer , the contact resistance is lower than required 10 - 5Ωcm2, Ni and Al electrode material can be achieved, but at above 100 ℃ poor thermal stability. Using Al / Ni / W / Au thermal stability of the composite electrode can be increased to 600 ℃, 100h, but the ratio of the contact resistance of up to 10 - 3Ωcm2. So to form a good ohmic contact with the silicon carbide is more difficult .

5, the supporting material temperature . SiC chip can operate at temperatures 600 ℃, but not necessarily its supporting material on this high-temperature capability . For example , the electrode material , the solder , the housing , the insulating material and so increase the operating temperature limit .

More than just a few examples , not all. There are many technological problems have not the ideal solution , as the interface state silicon carbide semiconductor surface trenching process , terminal passivation process , the gate oxide layer on the long-term stability of SiC MOSFET devices , the industry still not reached the same conclusion , greatly hinder the rapid development of SiC power devices .

V. Conclusions

Learn all kinds of technology development experience , everything has its own law of development. For example thyristor Shangshi remember the fifties appeared in China for electrical control, subject to all walks of life are welcome , but not easy. First SCR heat , due to the design principles have not completely clear , frequent product failure , the emergence of social fear " terrible silicon " is . Through the efforts , determined to overcome the problem, ushered in the popularity of the use of thyristor . Therefore , the development of SiC power devices is also impossible leap.

Yamaha Super Ténéré XT 1200 ZE 2014 - TEST

You will not escaped the attention of most visitors EICMA 2013, but for those who had been distracted by other news that the House of Iwata unveiled in Milan - such as the new MT- 09 and MT- 07 - now is the time to bring back the threshold of ' attention to the driving segment endurone road . How ? Speaking of a model which, since its inception , has had what it takes to pleasure , but which, in our opinion, the market has not rewarded enough underestimating a motorcycle from the content and from the chassis excellent. We refer of course to His Majesty "Super Ténéré ", which launched in 2010 with the model XT1200 Z for 2014 is updated in the right places bringing in a new range version , the XT1200 ZE , equipped with electronically adjustable suspension and protagonist of our tests roads of the Amalfi Coast .

SUSPENSION : 84 ADJUSTMENT S POSSIBLE !
As for the FJR1300 with the "AS" , with the arrival of the new system of electronically controlled suspension "Super Ténéré ," Yamaha have decided to dedicate a specific version , called " ZE " . Made in collaboration with Kayaba ( which also provides standard setting ) , this system is fully automated and allows the rider to adjust the various settings of the fork and shock absorber using the special commands (in some cases , even moving) . Speaking on both the upside down fork 43 mm on both the mono shock , you can choose the spring preload on four positions , depending on the load : the pilot , the pilot with luggage, rider with passenger, rider with passenger and luggage . As regards the hydraulic adjustments are 3 (Soft , Standard - STD - and Hard) : Overall, considering the 12 main options and the 7 additional levels , the total comes to 84 adjustments chance! Compared to the standard version, the ZE weighs 4 pounds more , for a total of 265 kg in running order (as against 261 of the XT1200 Z in 2014) .

RANGE AND PRICES
With the entry of the ZE range version of the Yamaha Super Ténéré , for 2014 , is now made up of the Super Ténéré XT1200E (standard, offering approximately 14,390 Euros ), the new Yamaha Super Ténéré XT1200ZE with electronic suspension to offer € 15,390 , while the need for super-equipped Worldcrosser 1,000 euro more : € 16,690 . For all versions of the colors available are two : Racing Competition White and Blue, like the one we tested .

ELECTRONIC MON AMOUR
If in fact the design of the Super Ténéré 2014 received only minor changes (new fairing with manual adjustment, new flow deflectors , aluminum handlebars and arrows standard LED ), the same can not be said of equipment electronic , definitely " plus , " a budget that reflects both the comfort that the driving dynamics. In the latter case , for example , listening to the criticisms of customers to the previous version , has been completely revised the D -Mode that takes full advantage of the new spirit of the engine, enhancing their skills , both in the map "T" ( Touring ) that the option "S" ( Sport) . Offered as standard always appreciated traction control that can be selected with the appropriate button on the left side of the LCD screen in 3 modes : 1, 2 , and OFF.

How about FJR 1300 , also on the range XT1200Z are fitted as standard with speed control ( cruise control ) , controlled with the appropriate controls on the left handlebar block . Also from here you can also regulate the heated grips , these series .

All information relating to the many set-ups can be obtained from the Super Ténéré 2014 shall be kept under control by the new instrumentation and full functional LCD , with LCD display inspired and off-road (finally) also equipped with gear indicator but is very sensitive to ' using the clutch ... In fact , as soon as sfiorerete the clutch ( as often happens in the city and in traffic where " sfrizionare " every so often helps) , the march is no longer indicated and displayed a nice " - " that will make you regret a fixed gear Indicator .

The powerful and modular braking system is always equipped with ABS as standard but , unlike some competitors , can not be deactivated via a button , but only through a cumbersome procedure : for lovers of off -road will be a bit more laborious.

ENGINE:
The technical Iwata did not start with the goal of raising the performance of their endurona , but simply got a performance boost as a result of the upgrade made . Thanks to the interventions unit ( remapped ), the 1,199 cc twin-cylinder earns 2 hp, for a total of 112 hp ( 82.4 kW) at 7,250 rpm / min , while the couple stood aa 117 Nm at 6,000 rpm . The other maxi enduro do it better? On paper, certainly , but before you judge also considered that to travel and have fun 112 hp are a very good card , a philosophy shared in part ( in our opinion, sensibly ) with the new one.
Suzuki V -Strom 1000 ABS 2014 and its 101 hp.

THE TEST ON THE AMALFI COAST
The more we drive , the more we wonder why the Super Ténéré has not been understood by the market. It 's true , the competition since 2010 offered the maxi enduro with power and performance most brilliant and a few kg less than the balance, but the balance of this great Japanese has always been a reference , as we noted a few summers ago in the 5,000 km in ten days.

The curiosity to try the new ZE 2014 was so much and the roads of the Amalfi Coast from Sorrento to Amalfi allowed us to enjoy the changes made to this model , now even more addictive .

Starting from the driving position , one can not but remain very impressed by the new instrumentation that , apart from the Gear Indicator too " sensitive to friction ," it really provides any information from the trip control, the set- up of the suspension , the activation of cruise control and heated grips . Beautiful to see and touch is the new aluminum handlebar that allows an optimal driving position , while valid is the protection offered by the windscreen as standard, even at highway speeds : sin only because of its manual adjustment, not exactly " lightning ."

The guide does not take much to know and appreciate the gifts for frames exceptional . If in the past with the Super Ténéré is entered immediately in confidence, with this XT1200 ZE , 2014, thanks to the new engine brio , we are located at a higher level . It is not in fact of those additional 2 CV , but the manner in which are provided : either with the map " T" with the "S" , the cylinder pushes in a more full-bodied and round , especially where necessary, or between approximately 2,000 and 4,000 rpm . Both maps are now more defined , and if the "T" can be considered the most appropriate in everyday life, as it provides all the 112 hp but gently , the "S " is at pains to differentiate itself by showcasing an even more vigorous since from low revs , as highlighted by an on / off the throttle more noticeable but never annoying.

We tried the new ZE with electronic suspension on asphalt perfect (just before Positano ), but also on slightly bumpy roads (going up on Mount Faito ) and we can confirm that the different set-up of the Kayaba are well calibrated , in particular the standard STD that we used for most of the time. Both changes in direction that the input curve of the front axle support is exemplary, without sinking or sagging, while the shock perfectly copy the roughness of the road surface. Unfortunately we did not get to try the new Super Ténéré in off-road due to bad weather ( yes, we could see that even on Mount Faito there may be fog ! ) , We confirm that this XT1200 ZE 2014 even more enjoyable and devoted to the great voyages than in the past and that if you give the chance to be guided , with difficulty be able to part with them .